Millimeter-Wave Monolithic Integrated Circuits for Imaging and Remote Sensing at 140, 200 and 300 GHzKALLFASS, Ingmar; TESSMANN, Axel; LEUTHER, Arnulf et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7485, issn 0277-786X, isbn 978-0-8194-7791-0 0-8194-7791-5, 1Vol, 74850L.1-74850L.10Conference Paper

A 67 GHz GaN Voltage-Controlled Oscillator MMIC With High Output PowerWEBER, Rainer; SCHWANTUSCHKE, Dirk; BRÜCKNER, Peter et al.IEEE microwave and wireless components letters. 2013, Vol 23, Num 7, pp 374-376, issn 1531-1309, 3 p.Article

Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor depositionCHUNYU WANG; CIMALLA, Volker; CHERKASHININ, Genady et al.Thin solid films. 2007, Vol 515, Num 5, pp 2921-2925, issn 0040-6090, 5 p.Article

Pt/GaN based schottky diodes for gas sensing applicationsALI, Majdeddin; CIMALLA, Volker; AMBACHER, Oliver et al.IEEE Sensors conference. 2004, isbn 0-7803-8692-2, 3Vol, vol 2, 959-962Conference Paper

Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxyMANUEL, Jose M; MORALES, Francisco M; GARCIA, Rafael et al.Journal of crystal growth. 2012, Vol 357, pp 35-41, issn 0022-0248, 7 p.Article

Structural properties of MBE AlInN and AlGalnN barrier layers for GaN-HEMT structuresKIRSTE, Lutz; LIM, Taek; AIDAM, Rolf et al.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 6, pp 1338-1341, issn 1862-6300, 4 p.Article

High efficient terahertz emission from InN surfacesCIMALLA, Volker; PRADARUTTI, Boris; MATTHÄUS, Gabor et al.Physica status solidi. B. Basic research. 2007, Vol 244, Num 6, pp 1829-1833, issn 0370-1972, 5 p.Conference Paper

Absorption and crystallinity of poly(3-hexylthiophene)/fullerene blends in dependence on annealing temperatureERB, Tobias; ZHOKHAVETS, Uladzimir; HOPPE, Harald et al.Thin solid films. 2006, Vol 511-12, pp 483-485, issn 0040-6090, 3 p.Conference Paper

Structural and optical properties of both pure poly(3-octylthiophene) (P3OT) and P3OT/fullerene filmsERB, Tobias; RALEVA, Sofiya; ZHOKHAVETS, Uladzimir et al.Thin solid films. 2004, Vol 450, Num 1, pp 97-100, issn 0040-6090, 4 p.Conference Paper

2 μm semiconductor disk laser with a heterodyne linewidth below 10 kHzROSENER, Benno; KASPAR, Sebastian; RATTUNDE, Marcel et al.Optics letters. 2011, Vol 36, Num 18, pp 3587-3589, issn 0146-9592, 3 p.Article

Elastic properties of nanowiresRÖHLIG, Claus-Christian; NIEBELSCHÜTZ, Merten; BRUECKNER, Klemens et al.Physica status solidi. B. Basic research. 2010, Vol 247, Num 10, pp 2557-2570, issn 0370-1972, 14 p.Article

InN as THz emitter excited at 1060 nm and 800 nmPRADARUTTI, Boris; MATTHÄUS, Gabor; BRÜCKNER, Claudia et al.Proceedings of SPIE, the International SOciety for Optical Engineering. 2006, pp 61940I.1-61940I.9, issn 0277-786X, isbn 0-8194-6250-0, 1VolConference Paper

DNA-sensor based on AIGaN/GaN high electron mobility transistorSCHWARZ, Stefan U; LINKOHR, Stefanie; LORENZ, Pierre et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 7, pp 1626-1629, issn 1862-6300, 4 p.Article

Improved Structural and Chemical Properties of Nearly Lattice-Matched Ternary and Quaternary Barriers for GaN-Based HEMTsMANUEL, José M; MORALES, Francisco M; GARCIA, Rafael et al.Crystal growth & design. 2011, Vol 11, Num 6, pp 2588-2591, issn 1528-7483, 4 p.Article

Enabling compact MMIC-based frontends for millimeter-wave imaging radar and radiometry at 94 and 210 GHzKALLFASS, Ingmar; TESSMANN, Axel; LEUTHER, Arnulf et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7117, issn 0277-786X, isbn 978-0-8194-7349-3 0-8194-7349-9, 1Vol, 71170O.1-71170O.9Conference Paper

AlN/diamond np-junctionsNEBEL, Christoph E; MISKYS, Claudio R; GARRIDO, Jose A et al.Diamond and related materials. 2003, Vol 12, Num 10-11, pp 1873-1876, issn 0925-9635, 4 p.Article